APA Citation

Isyaku, U. (2021). ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory. Institute of Electrical and Electronics Engineers Inc.

Chicago Style Citation

Isyaku, U.B. ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory. Institute of Electrical and Electronics Engineers Inc, 2021.

MLA Citation

Isyaku, U.B. ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory. Institute of Electrical and Electronics Engineers Inc, 2021.

Warning: These citations may not always be 100% accurate.