Vertical Ge photodetector base on InP taper waveguide

In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the mon...

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Main Authors: Amiri, I.S., Ariannejad, M.M., Azzuhri, S.R.B., Anwar, T., Kouhdaragh, V., Yupapin, P.
Format: Article
Institution: Universiti Teknologi Petronas
Record Id / ISBN-0: utp-eprints.21550 /
Published: Elsevier B.V. 2018
Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85044135463&doi=10.1016%2fj.rinp.2018.03.014&partnerID=40&md5=b8ccdc855694a7c85ed77aec14fd4474
http://eprints.utp.edu.my/21550/
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spelling utp-eprints.215502018-10-23T01:44:41Z Vertical Ge photodetector base on InP taper waveguide Amiri, I.S. Ariannejad, M.M. Azzuhri, S.R.B. Anwar, T. Kouhdaragh, V. Yupapin, P. In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition. © 2018 The Authors Elsevier B.V. 2018 Article PeerReviewed https://www.scopus.com/inward/record.uri?eid=2-s2.0-85044135463&doi=10.1016%2fj.rinp.2018.03.014&partnerID=40&md5=b8ccdc855694a7c85ed77aec14fd4474 Amiri, I.S. and Ariannejad, M.M. and Azzuhri, S.R.B. and Anwar, T. and Kouhdaragh, V. and Yupapin, P. (2018) Vertical Ge photodetector base on InP taper waveguide. Results in Physics, 9 . pp. 576-579. http://eprints.utp.edu.my/21550/
institution Universiti Teknologi Petronas
collection UTP Institutional Repository
description In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition. © 2018 The Authors
format Article
author Amiri, I.S.
Ariannejad, M.M.
Azzuhri, S.R.B.
Anwar, T.
Kouhdaragh, V.
Yupapin, P.
spellingShingle Amiri, I.S.
Ariannejad, M.M.
Azzuhri, S.R.B.
Anwar, T.
Kouhdaragh, V.
Yupapin, P.
Vertical Ge photodetector base on InP taper waveguide
author_sort Amiri, I.S.
title Vertical Ge photodetector base on InP taper waveguide
title_short Vertical Ge photodetector base on InP taper waveguide
title_full Vertical Ge photodetector base on InP taper waveguide
title_fullStr Vertical Ge photodetector base on InP taper waveguide
title_full_unstemmed Vertical Ge photodetector base on InP taper waveguide
title_sort vertical ge photodetector base on inp taper waveguide
publisher Elsevier B.V.
publishDate 2018
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85044135463&doi=10.1016%2fj.rinp.2018.03.014&partnerID=40&md5=b8ccdc855694a7c85ed77aec14fd4474
http://eprints.utp.edu.my/21550/
_version_ 1741196478046535680
score 11.62408

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