UWB CMOS low noise amplifier for mode 1

This paper presents an ultra-wideband 3.1-4.9 GHz low noise amplifier (LNA) employing a sixth-order bandpass Chebyshev filter. The LNA has been designed using Silterra 0.18 μm CMOS technology at 1.8 V power supply. The simulation shows that the LNA attains a power gain of 14.1 dB with an input refl...

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Main Authors: Zulkifli, T.Z.A., Marzuki, A., Murad, S.A.Z.
Format: Article
Institution: Universiti Teknologi Petronas
Record Id / ISBN-0: utp-eprints.21782 /
Published: IEEE Computer Society 2018
Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85046373966&doi=10.1109%2fPRIMEASIA.2017.8280378&partnerID=40&md5=477a5e7150c9ea2b6d30809f6d0ebb7a
http://eprints.utp.edu.my/21782/
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spelling utp-eprints.217822019-03-06T01:39:48Z UWB CMOS low noise amplifier for mode 1 Zulkifli, T.Z.A. Marzuki, A. Murad, S.A.Z. This paper presents an ultra-wideband 3.1-4.9 GHz low noise amplifier (LNA) employing a sixth-order bandpass Chebyshev filter. The LNA has been designed using Silterra 0.18 μm CMOS technology at 1.8 V power supply. The simulation shows that the LNA attains a power gain of 14.1 dB with an input reflection coefficient less than -10 dB in frequency range of interest, a noise figure of 4.29 dB at 3.8 GHz, gain flatness of ±0.25 dB, a 1 dB compression point of -17.67 dBm, -6.90 dBm for IIP3 and power dissipation of 4.5 mW excluding the buffer stage. © 2017 IEEE. IEEE Computer Society 2018 Article PeerReviewed https://www.scopus.com/inward/record.uri?eid=2-s2.0-85046373966&doi=10.1109%2fPRIMEASIA.2017.8280378&partnerID=40&md5=477a5e7150c9ea2b6d30809f6d0ebb7a Zulkifli, T.Z.A. and Marzuki, A. and Murad, S.A.Z. (2018) UWB CMOS low noise amplifier for mode 1. Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, 2017-O . pp. 117-120. http://eprints.utp.edu.my/21782/
institution Universiti Teknologi Petronas
collection UTP Institutional Repository
description This paper presents an ultra-wideband 3.1-4.9 GHz low noise amplifier (LNA) employing a sixth-order bandpass Chebyshev filter. The LNA has been designed using Silterra 0.18 μm CMOS technology at 1.8 V power supply. The simulation shows that the LNA attains a power gain of 14.1 dB with an input reflection coefficient less than -10 dB in frequency range of interest, a noise figure of 4.29 dB at 3.8 GHz, gain flatness of ±0.25 dB, a 1 dB compression point of -17.67 dBm, -6.90 dBm for IIP3 and power dissipation of 4.5 mW excluding the buffer stage. © 2017 IEEE.
format Article
author Zulkifli, T.Z.A.
Marzuki, A.
Murad, S.A.Z.
spellingShingle Zulkifli, T.Z.A.
Marzuki, A.
Murad, S.A.Z.
UWB CMOS low noise amplifier for mode 1
author_sort Zulkifli, T.Z.A.
title UWB CMOS low noise amplifier for mode 1
title_short UWB CMOS low noise amplifier for mode 1
title_full UWB CMOS low noise amplifier for mode 1
title_fullStr UWB CMOS low noise amplifier for mode 1
title_full_unstemmed UWB CMOS low noise amplifier for mode 1
title_sort uwb cmos low noise amplifier for mode 1
publisher IEEE Computer Society
publishDate 2018
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85046373966&doi=10.1109%2fPRIMEASIA.2017.8280378&partnerID=40&md5=477a5e7150c9ea2b6d30809f6d0ebb7a
http://eprints.utp.edu.my/21782/
_version_ 1741196519871086592
score 11.62408

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