Total-dose effects on power mosfet in sepic converter for nanosatel-lite applications

Background: Power converters used in nanosatellite application required to be more tol-erant to radiations including proton, electron and heavy-ion radiation. Methods: A Single-Ended Primary Inductance Converter (SEPIC) is selected for the nanosatellite application because of the availability to ste...

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Main Authors: Krishnamurthy, S., Kannan, R., Mohamad, F.F.A., Ahmad, M.S., Abdullah, Y.
Format: Article
Institution: Universiti Teknologi Petronas
Record Id / ISBN-0: utp-eprints.23182 /
Published: Bentham Science Publishers 2020
Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85091588371&doi=10.2174%2f2352096512666191004154951&partnerID=40&md5=93ae68f951b74307ae2e7fe7d65deb81
http://eprints.utp.edu.my/23182/
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spelling utp-eprints.231822021-08-19T06:09:56Z Total-dose effects on power mosfet in sepic converter for nanosatel-lite applications Krishnamurthy, S. Kannan, R. Mohamad, F.F.A. Ahmad, M.S. Abdullah, Y. Background: Power converters used in nanosatellite application required to be more tol-erant to radiations including proton, electron and heavy-ion radiation. Methods: A Single-Ended Primary Inductance Converter (SEPIC) is selected for the nanosatellite application because of the availability to step up and down the input voltage as well as having a non-inverting polarity between the input and output voltage. In this paper, remodeled SEPIC converter proposed with an improved performance at radiation environment to work for nanosatellite application. In addition, the analysis is carried out for the irradiated power MOSFET in SEPIC converter to check its impact on converter behavior. Results: Experiments conducted with the help of power MOSFET switch used in converter, irradiated with Cobalt60 gamma ray dose level from 50krad to 300krad and output characteristics ana-lyzed by chancing the duty cycle of converter. Investigations shown that conventional converter output characteristics were virtually constant from 10 to 60 duty cycle when different radiated MOSFETs used in the converter. Conclusion: The electrical characteristics started to fluctuate at 60 duty cycle and onwards, while the remodeled converter circuit was less distorted when increasing the radiation dose. © 2020 Bentham Science Publishers. Bentham Science Publishers 2020 Article NonPeerReviewed https://www.scopus.com/inward/record.uri?eid=2-s2.0-85091588371&doi=10.2174%2f2352096512666191004154951&partnerID=40&md5=93ae68f951b74307ae2e7fe7d65deb81 Krishnamurthy, S. and Kannan, R. and Mohamad, F.F.A. and Ahmad, M.S. and Abdullah, Y. (2020) Total-dose effects on power mosfet in sepic converter for nanosatel-lite applications. Recent Advances in Electrical and Electronic Engineering, 13 (5). pp. 758-765. http://eprints.utp.edu.my/23182/
institution Universiti Teknologi Petronas
collection UTP Institutional Repository
description Background: Power converters used in nanosatellite application required to be more tol-erant to radiations including proton, electron and heavy-ion radiation. Methods: A Single-Ended Primary Inductance Converter (SEPIC) is selected for the nanosatellite application because of the availability to step up and down the input voltage as well as having a non-inverting polarity between the input and output voltage. In this paper, remodeled SEPIC converter proposed with an improved performance at radiation environment to work for nanosatellite application. In addition, the analysis is carried out for the irradiated power MOSFET in SEPIC converter to check its impact on converter behavior. Results: Experiments conducted with the help of power MOSFET switch used in converter, irradiated with Cobalt60 gamma ray dose level from 50krad to 300krad and output characteristics ana-lyzed by chancing the duty cycle of converter. Investigations shown that conventional converter output characteristics were virtually constant from 10 to 60 duty cycle when different radiated MOSFETs used in the converter. Conclusion: The electrical characteristics started to fluctuate at 60 duty cycle and onwards, while the remodeled converter circuit was less distorted when increasing the radiation dose. © 2020 Bentham Science Publishers.
format Article
author Krishnamurthy, S.
Kannan, R.
Mohamad, F.F.A.
Ahmad, M.S.
Abdullah, Y.
spellingShingle Krishnamurthy, S.
Kannan, R.
Mohamad, F.F.A.
Ahmad, M.S.
Abdullah, Y.
Total-dose effects on power mosfet in sepic converter for nanosatel-lite applications
author_sort Krishnamurthy, S.
title Total-dose effects on power mosfet in sepic converter for nanosatel-lite applications
title_short Total-dose effects on power mosfet in sepic converter for nanosatel-lite applications
title_full Total-dose effects on power mosfet in sepic converter for nanosatel-lite applications
title_fullStr Total-dose effects on power mosfet in sepic converter for nanosatel-lite applications
title_full_unstemmed Total-dose effects on power mosfet in sepic converter for nanosatel-lite applications
title_sort total-dose effects on power mosfet in sepic converter for nanosatel-lite applications
publisher Bentham Science Publishers
publishDate 2020
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85091588371&doi=10.2174%2f2352096512666191004154951&partnerID=40&md5=93ae68f951b74307ae2e7fe7d65deb81
http://eprints.utp.edu.my/23182/
_version_ 1741196634552795136
score 11.62408

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