The effect of reaction temperature on the formation of 2H-SiC and 3C-SiC nanowhiskers

Synthesis of 2H and 3C-polytype silicon carbide nanowhiskers mixture of silicon dioxide and carbon was performed by carbothermal reduction process. The reaction temperature for synthesis of 2H-SiC was varied from 1350 C to 1650 C and for the 3C-SiC this range was varied from 1450 C to 1650 C. Scanni...

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Main Authors: Dzulkifli, H., Mustapha, M., Sallih, N., Kakooei, S., Mustapha, F.
Format: Article
Institution: Universiti Teknologi Petronas
Record Id / ISBN-0: utp-eprints.23187 /
Published: Growing Science 2020
Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85084747208&doi=10.5267%2fj.esm.2020.3.001&partnerID=40&md5=559efc957877ad3ffd1e1f0bde6a8977
http://eprints.utp.edu.my/23187/
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spelling utp-eprints.231872021-08-19T06:09:46Z The effect of reaction temperature on the formation of 2H-SiC and 3C-SiC nanowhiskers Dzulkifli, H. Mustapha, M. Sallih, N. Kakooei, S. Mustapha, F. Synthesis of 2H and 3C-polytype silicon carbide nanowhiskers mixture of silicon dioxide and carbon was performed by carbothermal reduction process. The reaction temperature for synthesis of 2H-SiC was varied from 1350 C to 1650 C and for the 3C-SiC this range was varied from 1450 C to 1650 C. Scanning Electron Microscopy (SEM) analyses showed that nanowhiskers structures of both 2H-SiC and 3C-SiC polytypes has a size up to 100 nm in diameters and several microns in length. However, the orientation and pattern of grains were different in both structures. While for 3C-SiC polytype, the shape has been classified as SiC majorly grew along 101 plane by X-ray Diffraction pattern and finalized by Raman shift peaks at 799 and 959 cm-1, the shape of 2H-polytipe silicon carbide was categorized as SiC majorly grown along 111 plane confirmed by Raman shift peak at 799 and 963 cm-1. The mechanism of vapor-gas interaction was also suggested and discussed for both SiC nanowhiskers polytypes. © 2020 Growing Science Ltd. All rights reserved. © 2020 by the authors; licensee Growing Science, Canada. Growing Science 2020 Article NonPeerReviewed https://www.scopus.com/inward/record.uri?eid=2-s2.0-85084747208&doi=10.5267%2fj.esm.2020.3.001&partnerID=40&md5=559efc957877ad3ffd1e1f0bde6a8977 Dzulkifli, H. and Mustapha, M. and Sallih, N. and Kakooei, S. and Mustapha, F. (2020) The effect of reaction temperature on the formation of 2H-SiC and 3C-SiC nanowhiskers. Engineering Solid Mechanics, 8 (4). pp. 381-388. http://eprints.utp.edu.my/23187/
institution Universiti Teknologi Petronas
collection UTP Institutional Repository
description Synthesis of 2H and 3C-polytype silicon carbide nanowhiskers mixture of silicon dioxide and carbon was performed by carbothermal reduction process. The reaction temperature for synthesis of 2H-SiC was varied from 1350 C to 1650 C and for the 3C-SiC this range was varied from 1450 C to 1650 C. Scanning Electron Microscopy (SEM) analyses showed that nanowhiskers structures of both 2H-SiC and 3C-SiC polytypes has a size up to 100 nm in diameters and several microns in length. However, the orientation and pattern of grains were different in both structures. While for 3C-SiC polytype, the shape has been classified as SiC majorly grew along 101 plane by X-ray Diffraction pattern and finalized by Raman shift peaks at 799 and 959 cm-1, the shape of 2H-polytipe silicon carbide was categorized as SiC majorly grown along 111 plane confirmed by Raman shift peak at 799 and 963 cm-1. The mechanism of vapor-gas interaction was also suggested and discussed for both SiC nanowhiskers polytypes. © 2020 Growing Science Ltd. All rights reserved. © 2020 by the authors; licensee Growing Science, Canada.
format Article
author Dzulkifli, H.
Mustapha, M.
Sallih, N.
Kakooei, S.
Mustapha, F.
spellingShingle Dzulkifli, H.
Mustapha, M.
Sallih, N.
Kakooei, S.
Mustapha, F.
The effect of reaction temperature on the formation of 2H-SiC and 3C-SiC nanowhiskers
author_sort Dzulkifli, H.
title The effect of reaction temperature on the formation of 2H-SiC and 3C-SiC nanowhiskers
title_short The effect of reaction temperature on the formation of 2H-SiC and 3C-SiC nanowhiskers
title_full The effect of reaction temperature on the formation of 2H-SiC and 3C-SiC nanowhiskers
title_fullStr The effect of reaction temperature on the formation of 2H-SiC and 3C-SiC nanowhiskers
title_full_unstemmed The effect of reaction temperature on the formation of 2H-SiC and 3C-SiC nanowhiskers
title_sort effect of reaction temperature on the formation of 2h-sic and 3c-sic nanowhiskers
publisher Growing Science
publishDate 2020
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85084747208&doi=10.5267%2fj.esm.2020.3.001&partnerID=40&md5=559efc957877ad3ffd1e1f0bde6a8977
http://eprints.utp.edu.my/23187/
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score 11.62408

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