Analysis of band gap in AA and Ab stacked bilayer graphene by Hamiltonian tight binding method
The electronic properties of AA and AB-stacked bilayer graphene has been carefully investigated by the principle of Hamiltonian tight binding model. It is determined that the AA-stacked bilayer graphene not showing any significant response to the change in the applied electric field. However, we fin...
| Main Authors: | Junaid, M., Witjaksono, G. |
|---|---|
| Format: | Conference or Workshop Item |
| Institution: | Universiti Teknologi Petronas |
| Record Id / ISBN-0: | utp-eprints.23538 / |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2019
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| Online Access: |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078200573&doi=10.1109%2fSENSORSNANO44414.2019.8940102&partnerID=40&md5=a9c0058961abfb25af69e85bbf038ed5 http://eprints.utp.edu.my/23538/ |
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