2-D Design of Double Gate Schottky Tunnel MOSFET for High-Performance Use in Analog/RF Applications
In this work, a new structure of Schottky tunneling MOSFET has been designed and simulated. The proposed device structure uses floating gates and dual material main gates to counter short channel effects and to improve RF/Analog figures of merit for low power design applications. The use of floating...
| Main Authors: | Rashid, S., Bashir, F., Khanday, F.A., Rafiq Beigh, M., Hussin, F.A. |
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| Format: | Article |
| Institution: | Universiti Teknologi Petronas |
| Record Id / ISBN-0: | utp-eprints.23839 / |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2021
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| Online Access: |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85107173607&doi=10.1109%2fACCESS.2021.3083929&partnerID=40&md5=98214f16a9e85119155db7540b324640 http://eprints.utp.edu.my/23839/ |
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