New Symmetric Enhanced-Boost Modified Z-Source Inverters with Switched Z-Impedance
In this paper, two new symmetric structures are proposed to modify existing enhanced-boost Z-source inverter (EB-ZSI) by employing the same number of components in the Z-impedance network. The Z-impedance network in the first structure is connected in parallel with H-bridge circuit to form a topolog...
| Main Authors: | Subhani, N., Kannan, R., Mahmud, A. |
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| Format: | Conference or Workshop Item |
| Institution: | Universiti Teknologi Petronas |
| Record Id / ISBN-0: | utp-eprints.24717 / |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2020
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| Online Access: |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85084372506&doi=10.1109%2fPESGRE45664.2020.9070452&partnerID=40&md5=5936b63699bc5280c663a6306ff741c4 http://eprints.utp.edu.my/24717/ |
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| Summary: |
In this paper, two new symmetric structures are proposed to modify existing enhanced-boost Z-source inverter (EB-ZSI) by employing the same number of components in the Z-impedance network. The Z-impedance network in the first structure is connected in parallel with H-bridge circuit to form a topology called, enhanced-boost modified Z-source inverter (EBM-ZSI) while the second topology is named as improved EBM-ZSI (iEBM-ZSI) where Z impedance network is connected in series to H-bridge circuit. The proposed structures or topologies exhibit less capacitor voltage stresses on their impedance networks and input start-up inrush current for a similar boost factor and voltage gain to that of an EB-ZSI. The proposed iEBM possesses a common ground feature along with the improved performance in terms of reducing both the capacitor voltage stress and input start-up inrush current as compared to both EBM-ZSI and EB-ZSI. This paper presents some analyses to support these claims and simulation studies are carried out to further strengthen the analytical results. © 2020 IEEE. |
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