Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices

Main Authors: Bature, U.I., Nawi, I.M., Khir, M.H.M., Zahoor, F., Algamili, A.S., Hashwan, S.S.B., Zakariya, M.A.
Format: Article
Institution: Universiti Teknologi Petronas
Record Id / ISBN-0: utp-eprints.28663 /
Published: MDPI 2022
Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85124964825&doi=10.3390%2fma15031205&partnerID=40&md5=f524e38844995f7a200366c87308e9ff
http://eprints.utp.edu.my/28663/
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