Modeling of a Highly Sensitive Lorentz Force-Based CMOS-MEMS Magnetometer for E-Compass Applications

Magnetometers are devices used to measure the magnetic field, however, most commercialized magnetometers are facing several disadvantages. If not being of low sensitivity, the device attains a high cost and high-power consumption. Thus, it is a necessity to mathematically design and model CMOS-MEMS...

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Main Authors: Al-Mahdi, O.L.Q., Ahmed, A.Y., Dennis, J.O., Md. Khir, M.H.
Format: Conference or Workshop Item
Institution: Universiti Teknologi Petronas
Record Id / ISBN-0: utp-eprints.29191 /
Published: Institute of Electrical and Electronics Engineers Inc. 2021
Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85124156091&doi=10.1109%2fICIAS49414.2021.9642619&partnerID=40&md5=08f2705b7f09d0329e8c5b15e636df08
http://eprints.utp.edu.my/29191/
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spelling utp-eprints.291912022-03-25T01:11:32Z Modeling of a Highly Sensitive Lorentz Force-Based CMOS-MEMS Magnetometer for E-Compass Applications Al-Mahdi, O.L.Q. Ahmed, A.Y. Dennis, J.O. Md. Khir, M.H. Magnetometers are devices used to measure the magnetic field, however, most commercialized magnetometers are facing several disadvantages. If not being of low sensitivity, the device attains a high cost and high-power consumption. Thus, it is a necessity to mathematically design and model CMOS-MEMS magnetometer which will be able to detect low magnetic fields. A fine simulation using ConventorWare software is applied to validate the designed magnetometer model. In this paper, Lorentz force and an integration of CMOS and MEMS technologies were implemented The designed magnetometer is made in one mode (out-of-plane) to function in one axis (z-axis), and the CMOS-MEMS magnetometer output signal is determined by piezoresistive sensing technique as piezoresistors are connected in full Wheatstone bridge circuit. A 3-D solid model was created and meshed based on the theoretical calculations and data. Simulation results shows that theoretical and simulation results are almost the same, except that resonance frequency is of 11 difference and 11.6 for quality factor. The average percentage difference between calculated and simulated displacement when magnetic field is detected to be of 2.801. © 2021 IEEE. Institute of Electrical and Electronics Engineers Inc. 2021 Conference or Workshop Item NonPeerReviewed https://www.scopus.com/inward/record.uri?eid=2-s2.0-85124156091&doi=10.1109%2fICIAS49414.2021.9642619&partnerID=40&md5=08f2705b7f09d0329e8c5b15e636df08 Al-Mahdi, O.L.Q. and Ahmed, A.Y. and Dennis, J.O. and Md. Khir, M.H. (2021) Modeling of a Highly Sensitive Lorentz Force-Based CMOS-MEMS Magnetometer for E-Compass Applications. In: UNSPECIFIED. http://eprints.utp.edu.my/29191/
institution Universiti Teknologi Petronas
collection UTP Institutional Repository
description Magnetometers are devices used to measure the magnetic field, however, most commercialized magnetometers are facing several disadvantages. If not being of low sensitivity, the device attains a high cost and high-power consumption. Thus, it is a necessity to mathematically design and model CMOS-MEMS magnetometer which will be able to detect low magnetic fields. A fine simulation using ConventorWare software is applied to validate the designed magnetometer model. In this paper, Lorentz force and an integration of CMOS and MEMS technologies were implemented The designed magnetometer is made in one mode (out-of-plane) to function in one axis (z-axis), and the CMOS-MEMS magnetometer output signal is determined by piezoresistive sensing technique as piezoresistors are connected in full Wheatstone bridge circuit. A 3-D solid model was created and meshed based on the theoretical calculations and data. Simulation results shows that theoretical and simulation results are almost the same, except that resonance frequency is of 11 difference and 11.6 for quality factor. The average percentage difference between calculated and simulated displacement when magnetic field is detected to be of 2.801. © 2021 IEEE.
format Conference or Workshop Item
author Al-Mahdi, O.L.Q.
Ahmed, A.Y.
Dennis, J.O.
Md. Khir, M.H.
spellingShingle Al-Mahdi, O.L.Q.
Ahmed, A.Y.
Dennis, J.O.
Md. Khir, M.H.
Modeling of a Highly Sensitive Lorentz Force-Based CMOS-MEMS Magnetometer for E-Compass Applications
author_sort Al-Mahdi, O.L.Q.
title Modeling of a Highly Sensitive Lorentz Force-Based CMOS-MEMS Magnetometer for E-Compass Applications
title_short Modeling of a Highly Sensitive Lorentz Force-Based CMOS-MEMS Magnetometer for E-Compass Applications
title_full Modeling of a Highly Sensitive Lorentz Force-Based CMOS-MEMS Magnetometer for E-Compass Applications
title_fullStr Modeling of a Highly Sensitive Lorentz Force-Based CMOS-MEMS Magnetometer for E-Compass Applications
title_full_unstemmed Modeling of a Highly Sensitive Lorentz Force-Based CMOS-MEMS Magnetometer for E-Compass Applications
title_sort modeling of a highly sensitive lorentz force-based cmos-mems magnetometer for e-compass applications
publisher Institute of Electrical and Electronics Engineers Inc.
publishDate 2021
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85124156091&doi=10.1109%2fICIAS49414.2021.9642619&partnerID=40&md5=08f2705b7f09d0329e8c5b15e636df08
http://eprints.utp.edu.my/29191/
_version_ 1741197202892521472
score 11.62408

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