ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory
Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top elec...
| Main Authors: | Isyaku, U.B., Khir, M.H.B.M., Nawi, I.M., Zakariya, M.A., Zahoor, F. |
|---|---|
| Format: | Article |
| Institution: | Universiti Teknologi Petronas |
| Record Id / ISBN-0: | utp-eprints.29493 / |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2021
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| Online Access: |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85111024999&doi=10.1109%2fACCESS.2021.3098061&partnerID=40&md5=3f182c311c6eb12aeef756a7e40ed14f http://eprints.utp.edu.my/29493/ |
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