NEWMANN NOAH ANAK LUANG

Study shows that ReRAM can retain data without power, consume less power and transfer data at a faster rate in comparison with conventional memory technology. More work is put into the development of ReRAM due to rapid growth of technology, limitation of memory space, as well as computer memory endu...

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Main Author: ANAK LUANG, NEWMANN NOAH
Format: Final Year Project
Language: English
Institution: Universiti Teknologi Petronas
Record Id / ISBN-0: utp-utpedia.20105 /
Published: IRC 2019
Online Access: http://utpedia.utp.edu.my/20105/1/Final%20Dissertation_Newmann%20Noah_20364.pdf
http://utpedia.utp.edu.my/20105/
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recordtype eprints
spelling utp-utpedia.201052019-12-20T16:14:30Z http://utpedia.utp.edu.my/20105/ NEWMANN NOAH ANAK LUANG ANAK LUANG, NEWMANN NOAH Study shows that ReRAM can retain data without power, consume less power and transfer data at a faster rate in comparison with conventional memory technology. More work is put into the development of ReRAM due to rapid growth of technology, limitation of memory space, as well as computer memory endurance cycle. This paper provides a brief introduction of the research. This project aims to develop ReRAM using the sol-gel method and spin coating method. First, ZnO solution is prepared by using sol-gel method in which zinc acetate dihydrate is mixed with solvent and stirred with a magnetic stirrer. Then, the solution is deposited on the Si substrate to develop ZnO thin films by using spin coating method. For characterization of IV curve and physical attributes, SIM2RRAM software was used. The result was, the stable of resistance switching depend on stable reset voltage. While reset voltage is associated with the thickness of Conducting Filament (CF). IRC 2019-01 Final Year Project NonPeerReviewed application/pdf en http://utpedia.utp.edu.my/20105/1/Final%20Dissertation_Newmann%20Noah_20364.pdf ANAK LUANG, NEWMANN NOAH (2019) NEWMANN NOAH ANAK LUANG. IRC, Universiti Teknologi PETRONAS. (Submitted)
institution Universiti Teknologi Petronas
collection UTPedia
language English
description Study shows that ReRAM can retain data without power, consume less power and transfer data at a faster rate in comparison with conventional memory technology. More work is put into the development of ReRAM due to rapid growth of technology, limitation of memory space, as well as computer memory endurance cycle. This paper provides a brief introduction of the research. This project aims to develop ReRAM using the sol-gel method and spin coating method. First, ZnO solution is prepared by using sol-gel method in which zinc acetate dihydrate is mixed with solvent and stirred with a magnetic stirrer. Then, the solution is deposited on the Si substrate to develop ZnO thin films by using spin coating method. For characterization of IV curve and physical attributes, SIM2RRAM software was used. The result was, the stable of resistance switching depend on stable reset voltage. While reset voltage is associated with the thickness of Conducting Filament (CF).
format Final Year Project
author ANAK LUANG, NEWMANN NOAH
spellingShingle ANAK LUANG, NEWMANN NOAH
NEWMANN NOAH ANAK LUANG
author_sort ANAK LUANG, NEWMANN NOAH
title NEWMANN NOAH ANAK LUANG
title_short NEWMANN NOAH ANAK LUANG
title_full NEWMANN NOAH ANAK LUANG
title_fullStr NEWMANN NOAH ANAK LUANG
title_full_unstemmed NEWMANN NOAH ANAK LUANG
title_sort newmann noah anak luang
publisher IRC
publishDate 2019
url http://utpedia.utp.edu.my/20105/1/Final%20Dissertation_Newmann%20Noah_20364.pdf
http://utpedia.utp.edu.my/20105/
_version_ 1741195578593771520
score 11.62408

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