Modeling and optimizing of threshold voltage of 32nm NMOS transistor using L18Orthogonal Array Taguchi method /

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Bibliographic Details
Main Author: Elgomati, Husam Ahmed
Other Authors: Burhanuddin Yeop Majlis, Ibrahim Ahmad
Format: Article
Language:English
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245 1 0 |a Modeling and optimizing of threshold voltage of 32nm NMOS transistor using L18Orthogonal Array Taguchi method /  |c Husam Ahmed Elgomati, Burhanuddin Yeop Majlis, Ibrahim Ahmad 
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650 1 0 |a Microelectronics  |x Research  |v Congresses 
650 2 0 |a Semiconductors  |x Research  |v Congresses 
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773 0 |7 m2am  |w (PNM)000709317  |a International Conference on Fundamental and Applied Sciences (ICFAS2012) (2nd : 2012 : Kuala Lumpur)  |t [FRONTIER RESEARCH IN SCIENCES FOR SUSTAINABLE TECHNOLOGY ADVANCEMENT : CONFERENCE PROCEEDINGS 2012 THE 2ND INTERNATIONAL CONFERENCE ON FUNDAMENTAL AND APPLIED SCIENCES (ICFAS2012) : A CONFERENCE OF WORLD ENGINEERING, SCIENCE & TECHNOLOGY CONGRESS(ESTCON), 12 – 14 June 2012 Kuala Lumpur Convention Centre.  |d Tronoh, Perak : Universiti Teknologi Petronas, 2012  |z 9789832271703(pbk. : v. 2)  |g p. 537-541 
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