TID Radiation Effects in Si STP6N65M2 and SiC SCT2H12NZGC11 Power MOSFET
This paper discusses the total ionizing effects on Silicon Power MOSFET and Silicon Carbide Power MOSFET. It is common that an electronic device in space to face high dose of radiation. Power MOSFET is also a part of the electronic system used in outer space to power up devices. The performance of a...
| Main Author: | Ganapathy, Thannirmalai |
|---|---|
| Format: | Final Year Project |
| Language: | English |
| Institution: | Universiti Teknologi Petronas |
| Record Id / ISBN-0: | utp-utpedia.20203 / |
| Published: |
IRC
2019
|
| Online Access: |
http://utpedia.utp.edu.my/20203/1/6.0%20Final%20Report_20143_Thannirmalai.pdf http://utpedia.utp.edu.my/20203/ |
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