Study and Analysis of Power MOSFET Characteristics in Radiation Environment
Semiconductor devices are playing a vital role in the industry of integrated circuits and solid state devices because of their fast switching speeds and low power consumption capabilities. Effects of radiations in space can cause changes in the electrical characteristics causing threshold voltage...
| Main Author: | KHALID, HESHAM |
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| Format: | Final Year Project |
| Language: | English |
| Institution: | Universiti Teknologi Petronas |
| Record Id / ISBN-0: | utp-utpedia.22571 / |
| Published: |
Universiti Teknologi PETRONAS
2016
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| Subjects: | |
| Online Access: |
http://utpedia.utp.edu.my/22571/1/FINAL%20YEAR%20PROJECT%20%28Final%20Report%29.pdf http://utpedia.utp.edu.my/22571/ |
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| Summary: |
Semiconductor devices are playing a vital role in the industry of integrated
circuits and solid state devices because of their fast switching speeds and low power
consumption capabilities. Effects of radiations in space can cause changes in the
electrical characteristics causing threshold voltage shifts and drain current degradation.
Damaging mechanisms such as Displacement Damage, Single Event Effects (SEE),
Total Ionization Dose (TID) effects are sole reason of these effects. |
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