INVESTIGATION ON GEOMETRICAL STRUCTURE AND DOPING CONCENTRATION OF POWER DMOS FOR SPACE ENVIRONMENT APPLICATIONS

The inherent characteristics of power DMOS for high frequency application makes the device very important especially for switching device operation. However, the implementation of the power DMOS in harsh environment especially for space application requires the device to withstand radiation effects...

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Main Author: YAHYA, ERMAN AZWAN
Format: Thesis
Language: English
Institution: Universiti Teknologi Petronas
Record Id / ISBN-0: utp-utpedia.20510 /
Published: 2019
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access: http://utpedia.utp.edu.my/20510/1/ErmanAzwan_16001752.pdf
http://utpedia.utp.edu.my/20510/
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spelling utp-utpedia.205102021-08-30T16:32:03Z http://utpedia.utp.edu.my/20510/ INVESTIGATION ON GEOMETRICAL STRUCTURE AND DOPING CONCENTRATION OF POWER DMOS FOR SPACE ENVIRONMENT APPLICATIONS YAHYA, ERMAN AZWAN TK Electrical engineering. Electronics Nuclear engineering The inherent characteristics of power DMOS for high frequency application makes the device very important especially for switching device operation. However, the implementation of the power DMOS in harsh environment especially for space application requires the device to withstand radiation effects. This could have resulted in high electric field stress introduced in the power DMOS structure at JFET region. In this research, a new radiation hardened technique is proposed by modifying the Junction Field Effect Transistor (JFET) region in the device structure and the SEE phenomena effects are analysed by using “reliability test tool” in software simulation. Based on simulation results, the electrical characteristics of proposed and conventional design are approximately 95% similar. The average different margin between both designs also very less and it is about 0.5% for output characteristic and around 1% for the transfer characteristic. 2019-10 Thesis NonPeerReviewed application/pdf en http://utpedia.utp.edu.my/20510/1/ErmanAzwan_16001752.pdf YAHYA, ERMAN AZWAN (2019) INVESTIGATION ON GEOMETRICAL STRUCTURE AND DOPING CONCENTRATION OF POWER DMOS FOR SPACE ENVIRONMENT APPLICATIONS. Masters thesis, Universiti Teknologi PETRONAS.
institution Universiti Teknologi Petronas
collection UTPedia
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
YAHYA, ERMAN AZWAN
INVESTIGATION ON GEOMETRICAL STRUCTURE AND DOPING CONCENTRATION OF POWER DMOS FOR SPACE ENVIRONMENT APPLICATIONS
description The inherent characteristics of power DMOS for high frequency application makes the device very important especially for switching device operation. However, the implementation of the power DMOS in harsh environment especially for space application requires the device to withstand radiation effects. This could have resulted in high electric field stress introduced in the power DMOS structure at JFET region. In this research, a new radiation hardened technique is proposed by modifying the Junction Field Effect Transistor (JFET) region in the device structure and the SEE phenomena effects are analysed by using “reliability test tool” in software simulation. Based on simulation results, the electrical characteristics of proposed and conventional design are approximately 95% similar. The average different margin between both designs also very less and it is about 0.5% for output characteristic and around 1% for the transfer characteristic.
format Thesis
author YAHYA, ERMAN AZWAN
author_sort YAHYA, ERMAN AZWAN
title INVESTIGATION ON GEOMETRICAL STRUCTURE AND DOPING CONCENTRATION OF POWER DMOS FOR SPACE ENVIRONMENT APPLICATIONS
title_short INVESTIGATION ON GEOMETRICAL STRUCTURE AND DOPING CONCENTRATION OF POWER DMOS FOR SPACE ENVIRONMENT APPLICATIONS
title_full INVESTIGATION ON GEOMETRICAL STRUCTURE AND DOPING CONCENTRATION OF POWER DMOS FOR SPACE ENVIRONMENT APPLICATIONS
title_fullStr INVESTIGATION ON GEOMETRICAL STRUCTURE AND DOPING CONCENTRATION OF POWER DMOS FOR SPACE ENVIRONMENT APPLICATIONS
title_full_unstemmed INVESTIGATION ON GEOMETRICAL STRUCTURE AND DOPING CONCENTRATION OF POWER DMOS FOR SPACE ENVIRONMENT APPLICATIONS
title_sort investigation on geometrical structure and doping concentration of power dmos for space environment applications
publishDate 2019
url http://utpedia.utp.edu.my/20510/1/ErmanAzwan_16001752.pdf
http://utpedia.utp.edu.my/20510/
_version_ 1741195629330169856
score 11.62408

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