Study and Analysis of Power MOSFET Characteristics in Radiation Environment

Semiconductor devices are playing a vital role in the industry of integrated circuits and solid state devices because of their fast switching speeds and low power consumption capabilities. Effects of radiations in space can cause changes in the electrical characteristics causing threshold voltage...

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Main Author: KHALID, HESHAM
Format: Final Year Project
Language: English
Institution: Universiti Teknologi Petronas
Record Id / ISBN-0: utp-utpedia.22571 /
Published: Universiti Teknologi PETRONAS 2016
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access: http://utpedia.utp.edu.my/22571/1/FINAL%20YEAR%20PROJECT%20%28Final%20Report%29.pdf
http://utpedia.utp.edu.my/22571/
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spelling utp-utpedia.225712022-02-17T02:52:02Z http://utpedia.utp.edu.my/22571/ Study and Analysis of Power MOSFET Characteristics in Radiation Environment KHALID, HESHAM TK Electrical engineering. Electronics Nuclear engineering Semiconductor devices are playing a vital role in the industry of integrated circuits and solid state devices because of their fast switching speeds and low power consumption capabilities. Effects of radiations in space can cause changes in the electrical characteristics causing threshold voltage shifts and drain current degradation. Damaging mechanisms such as Displacement Damage, Single Event Effects (SEE), Total Ionization Dose (TID) effects are sole reason of these effects. Universiti Teknologi PETRONAS 2016-09 Final Year Project NonPeerReviewed application/pdf en http://utpedia.utp.edu.my/22571/1/FINAL%20YEAR%20PROJECT%20%28Final%20Report%29.pdf KHALID, HESHAM (2016) Study and Analysis of Power MOSFET Characteristics in Radiation Environment. Universiti Teknologi PETRONAS. (Submitted)
institution Universiti Teknologi Petronas
collection UTPedia
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
KHALID, HESHAM
Study and Analysis of Power MOSFET Characteristics in Radiation Environment
description Semiconductor devices are playing a vital role in the industry of integrated circuits and solid state devices because of their fast switching speeds and low power consumption capabilities. Effects of radiations in space can cause changes in the electrical characteristics causing threshold voltage shifts and drain current degradation. Damaging mechanisms such as Displacement Damage, Single Event Effects (SEE), Total Ionization Dose (TID) effects are sole reason of these effects.
format Final Year Project
author KHALID, HESHAM
author_sort KHALID, HESHAM
title Study and Analysis of Power MOSFET Characteristics in Radiation Environment
title_short Study and Analysis of Power MOSFET Characteristics in Radiation Environment
title_full Study and Analysis of Power MOSFET Characteristics in Radiation Environment
title_fullStr Study and Analysis of Power MOSFET Characteristics in Radiation Environment
title_full_unstemmed Study and Analysis of Power MOSFET Characteristics in Radiation Environment
title_sort study and analysis of power mosfet characteristics in radiation environment
publisher Universiti Teknologi PETRONAS
publishDate 2016
url http://utpedia.utp.edu.my/22571/1/FINAL%20YEAR%20PROJECT%20%28Final%20Report%29.pdf
http://utpedia.utp.edu.my/22571/
_version_ 1741195835788492800
score 11.62408

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