Modeling and optimizing of threshold voltage of 32nm NMOS transistor using L18Orthogonal Array Taguchi method /
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Tags: |
No Tags, Be the first to tag this record!
|
Similar Items: Modeling and optimizing of threshold voltage of 32nm NMOS transistor using L18Orthogonal Array Taguchi method /
- Using Taguchi robust design method to develop an optimized synthesis procedure of nanocrystalline cancrinite /
- Impact of high-oxygen thermal annealing on the structural, optical and electrical properties of ZnO disc made from 20-nm ZnO nanoparticles /
- A review of TiO2 nanotube arrays for hydrogen sensing application /
- Control Factors Optimization on Threshold Voltage and Leakage Current in 22 nm NMOS Transistor Using Taguchi Method /
- Photocatalytic water splitting into H2 and O2 and charge separation mechanism on Dye Modified KTa(Zr)O3 /
- Synthesis and characterization of molybdenum catalysts supported on -AI2O3-CeO2-comppsite oxides /