Enhanced Trench Shielded Power UMOSFET for Single Event Burnout Hardening
An enhanced structure for Single-Event Burnout (SEB) hardening in trench gate shielded power UMOSFET is presented in this work. The proposed power MOSFET structure includes an n-type region wrapping p+ shielded region underneath the gate trench and adds an n-buffer layer between the epitaxial layer...
| Main Authors: | Krishnamurthy, S., Kannan, R., Hussin, F.A., Yahya, E.A. |
|---|---|
| Format: | Conference or Workshop Item |
| Institution: | Universiti Teknologi Petronas |
| Record Id / ISBN-0: | utp-eprints.23535 / |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2019
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| Online Access: |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078311992&doi=10.1109%2fRSM46715.2019.8943495&partnerID=40&md5=7c8ac635c0f811653efb271a9f089524 http://eprints.utp.edu.my/23535/ |
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