Simulation study of single event burnout hardening technique on power UMOSFET using P-Island layer

Main Authors: Krishnamurthy, S., Kannan, R., Azmadi Hussin, F.
Format: Conference or Workshop Item
Institution: Universiti Teknologi Petronas
Record Id / ISBN-0: utp-eprints.24486 /
Published: Institute of Electrical and Electronics Engineers Inc. 2020
Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85100568647&doi=10.1109%2fPECon48942.2020.9314508&partnerID=40&md5=855f05c642f63589fed6956238ce151c
http://eprints.utp.edu.my/24486/
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id utp-eprints.24486
recordtype eprints
spelling utp-eprints.244862021-08-27T05:05:47Z Simulation study of single event burnout hardening technique on power UMOSFET using P-Island layer Krishnamurthy, S. Kannan, R. Azmadi Hussin, F. Institute of Electrical and Electronics Engineers Inc. 2020 Conference or Workshop Item NonPeerReviewed https://www.scopus.com/inward/record.uri?eid=2-s2.0-85100568647&doi=10.1109%2fPECon48942.2020.9314508&partnerID=40&md5=855f05c642f63589fed6956238ce151c Krishnamurthy, S. and Kannan, R. and Azmadi Hussin, F. (2020) Simulation study of single event burnout hardening technique on power UMOSFET using P-Island layer. In: UNSPECIFIED. http://eprints.utp.edu.my/24486/
institution Universiti Teknologi Petronas
collection UTP Institutional Repository
format Conference or Workshop Item
author Krishnamurthy, S.
Kannan, R.
Azmadi Hussin, F.
spellingShingle Krishnamurthy, S.
Kannan, R.
Azmadi Hussin, F.
Simulation study of single event burnout hardening technique on power UMOSFET using P-Island layer
author_sort Krishnamurthy, S.
title Simulation study of single event burnout hardening technique on power UMOSFET using P-Island layer
title_short Simulation study of single event burnout hardening technique on power UMOSFET using P-Island layer
title_full Simulation study of single event burnout hardening technique on power UMOSFET using P-Island layer
title_fullStr Simulation study of single event burnout hardening technique on power UMOSFET using P-Island layer
title_full_unstemmed Simulation study of single event burnout hardening technique on power UMOSFET using P-Island layer
title_sort simulation study of single event burnout hardening technique on power umosfet using p-island layer
publisher Institute of Electrical and Electronics Engineers Inc.
publishDate 2020
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85100568647&doi=10.1109%2fPECon48942.2020.9314508&partnerID=40&md5=855f05c642f63589fed6956238ce151c
http://eprints.utp.edu.my/24486/
_version_ 1741196820727463936
score 11.62408

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