Performance analysis of Arithmetic Mean method in determining peak junction temperature of semiconductor device

High reliability users of microelectronic devices have been derating junction temperature and other critical stress parameters to improve device reliability and extend operating life. The reliability of a semiconductor is determined by junction temperature. This paper gives a useful analysis on math...

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Main Authors: Muthuvalu, M.S., Asirvadam, V.S., Mashadov, G.
Format: Article
Institution: Universiti Teknologi Petronas
Record Id / ISBN-0: utp-eprints.26321 /
Published: Ain Shams University 2015
Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84959573705&doi=10.1016%2fj.asej.2015.04.007&partnerID=40&md5=470d9370541546c69be91fcaf46fd6ee
http://eprints.utp.edu.my/26321/
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spelling utp-eprints.263212022-03-14T04:47:15Z Performance analysis of Arithmetic Mean method in determining peak junction temperature of semiconductor device Muthuvalu, M.S. Asirvadam, V.S. Mashadov, G. High reliability users of microelectronic devices have been derating junction temperature and other critical stress parameters to improve device reliability and extend operating life. The reliability of a semiconductor is determined by junction temperature. This paper gives a useful analysis on mathematical approach which can be implemented to predict temperature of a silicon die. The problem could be modeled as heat conduction equation. In this study, numerical approach based on implicit scheme and Arithmetic Mean (AM) iterative method will be applied to solve the governing heat conduction equation. Numerical results are also included in order to assert the effectiveness of the proposed technique. © 2015 Faculty of Engineering, Ain Shams University. Ain Shams University 2015 Article NonPeerReviewed https://www.scopus.com/inward/record.uri?eid=2-s2.0-84959573705&doi=10.1016%2fj.asej.2015.04.007&partnerID=40&md5=470d9370541546c69be91fcaf46fd6ee Muthuvalu, M.S. and Asirvadam, V.S. and Mashadov, G. (2015) Performance analysis of Arithmetic Mean method in determining peak junction temperature of semiconductor device. Ain Shams Engineering Journal, 6 (4). pp. 1203-1210. http://eprints.utp.edu.my/26321/
institution Universiti Teknologi Petronas
collection UTP Institutional Repository
description High reliability users of microelectronic devices have been derating junction temperature and other critical stress parameters to improve device reliability and extend operating life. The reliability of a semiconductor is determined by junction temperature. This paper gives a useful analysis on mathematical approach which can be implemented to predict temperature of a silicon die. The problem could be modeled as heat conduction equation. In this study, numerical approach based on implicit scheme and Arithmetic Mean (AM) iterative method will be applied to solve the governing heat conduction equation. Numerical results are also included in order to assert the effectiveness of the proposed technique. © 2015 Faculty of Engineering, Ain Shams University.
format Article
author Muthuvalu, M.S.
Asirvadam, V.S.
Mashadov, G.
spellingShingle Muthuvalu, M.S.
Asirvadam, V.S.
Mashadov, G.
Performance analysis of Arithmetic Mean method in determining peak junction temperature of semiconductor device
author_sort Muthuvalu, M.S.
title Performance analysis of Arithmetic Mean method in determining peak junction temperature of semiconductor device
title_short Performance analysis of Arithmetic Mean method in determining peak junction temperature of semiconductor device
title_full Performance analysis of Arithmetic Mean method in determining peak junction temperature of semiconductor device
title_fullStr Performance analysis of Arithmetic Mean method in determining peak junction temperature of semiconductor device
title_full_unstemmed Performance analysis of Arithmetic Mean method in determining peak junction temperature of semiconductor device
title_sort performance analysis of arithmetic mean method in determining peak junction temperature of semiconductor device
publisher Ain Shams University
publishDate 2015
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-84959573705&doi=10.1016%2fj.asej.2015.04.007&partnerID=40&md5=470d9370541546c69be91fcaf46fd6ee
http://eprints.utp.edu.my/26321/
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score 11.62408