Total Ionizing Dose and Single Event Effect Radiation effects in SiC SCT10N120 Power MOSFET

Silicon Carbide Power MOSFET is type of high power switching device which is used in the space application, avionics and military applications. Silicon Carbide Power MOSFFETs are much favorable nowadays not only because of its fast switching capabilities and amplifying capabilities but also due t...

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Main Author: Rajendran, Vishandh
Format: Final Year Project
Language: English
Institution: Universiti Teknologi Petronas
Record Id / ISBN-0: utp-utpedia.19213 /
Published: 2018
Online Access: http://utpedia.utp.edu.my/19213/1/Final%20Dissertation.pdf
http://utpedia.utp.edu.my/19213/
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spelling utp-utpedia.192132019-06-20T08:32:01Z http://utpedia.utp.edu.my/19213/ Total Ionizing Dose and Single Event Effect Radiation effects in SiC SCT10N120 Power MOSFET Rajendran, Vishandh Silicon Carbide Power MOSFET is type of high power switching device which is used in the space application, avionics and military applications. Silicon Carbide Power MOSFFETs are much favorable nowadays not only because of its fast switching capabilities and amplifying capabilities but also due to its high Voltage and current handling capacity. At the space, the power MOSFETs are used in satellites for DC-DC converters such as buck converter or boost converter. These type converters provide stepup or step-down in DC voltage for the satellites. But due to the harmful radiation on the surrounding such as the outer space, these Power MOSFETs gets exposed and tends to perform poorly. The longer the exposure the higher the effect on the Power MOSFET. Sometimes single charged particle can cause the Power MOSFET to completely fail from performing. 2018-09 Final Year Project NonPeerReviewed application/pdf en http://utpedia.utp.edu.my/19213/1/Final%20Dissertation.pdf Rajendran, Vishandh (2018) Total Ionizing Dose and Single Event Effect Radiation effects in SiC SCT10N120 Power MOSFET. UNSPECIFIED.
institution Universiti Teknologi Petronas
collection UTPedia
language English
description Silicon Carbide Power MOSFET is type of high power switching device which is used in the space application, avionics and military applications. Silicon Carbide Power MOSFFETs are much favorable nowadays not only because of its fast switching capabilities and amplifying capabilities but also due to its high Voltage and current handling capacity. At the space, the power MOSFETs are used in satellites for DC-DC converters such as buck converter or boost converter. These type converters provide stepup or step-down in DC voltage for the satellites. But due to the harmful radiation on the surrounding such as the outer space, these Power MOSFETs gets exposed and tends to perform poorly. The longer the exposure the higher the effect on the Power MOSFET. Sometimes single charged particle can cause the Power MOSFET to completely fail from performing.
format Final Year Project
author Rajendran, Vishandh
spellingShingle Rajendran, Vishandh
Total Ionizing Dose and Single Event Effect Radiation effects in SiC SCT10N120 Power MOSFET
author_sort Rajendran, Vishandh
title Total Ionizing Dose and Single Event Effect Radiation effects in SiC SCT10N120 Power MOSFET
title_short Total Ionizing Dose and Single Event Effect Radiation effects in SiC SCT10N120 Power MOSFET
title_full Total Ionizing Dose and Single Event Effect Radiation effects in SiC SCT10N120 Power MOSFET
title_fullStr Total Ionizing Dose and Single Event Effect Radiation effects in SiC SCT10N120 Power MOSFET
title_full_unstemmed Total Ionizing Dose and Single Event Effect Radiation effects in SiC SCT10N120 Power MOSFET
title_sort total ionizing dose and single event effect radiation effects in sic sct10n120 power mosfet
publishDate 2018
url http://utpedia.utp.edu.my/19213/1/Final%20Dissertation.pdf
http://utpedia.utp.edu.my/19213/
_version_ 1741195464789721088
score 11.62408

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