Total Ionizing Dose and Single Event Effect Radiation effects in SiC SCT10N120 Power MOSFET
Silicon Carbide Power MOSFET is type of high power switching device which is used in the space application, avionics and military applications. Silicon Carbide Power MOSFFETs are much favorable nowadays not only because of its fast switching capabilities and amplifying capabilities but also due t...
| Main Author: | Rajendran, Vishandh |
|---|---|
| Format: | Final Year Project |
| Language: | English |
| Institution: | Universiti Teknologi Petronas |
| Record Id / ISBN-0: | utp-utpedia.19213 / |
| Published: |
2018
|
| Online Access: |
http://utpedia.utp.edu.my/19213/1/Final%20Dissertation.pdf http://utpedia.utp.edu.my/19213/ |
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